Research Interests: Flash Memory devices including (i) Physics Solid-state Devices, (ii) Electronic Devices and Circuits, (iii) Microelectronics, (iv) Neuromorphic Engineering, (v) Electronic System Design Engineering, (vi) Packaging The physics and technology of semiconductor devices, Neuromorphic Engineering for Artificial Intelligence, Materials & devices for brain-inspired computing, Flash memory technology – Floating gate, SONOS, Charge trapping materials, Flexible electronics using cost-effective solution-processed semiconductor and dielectrics, High-k gate dielectrics, Deep level and interface trap characterization, electronic transport, Ultra-High-speed Capacitance Voltage Measurement System and Technology (uHSCV), Integrated circuits, and system design with emerging CMOS devices, Quantum Technologies with Quantum Dots (QDs) and Nanoparticles (NPs) based devices, Packaging technology
Prof Sandip Mondal received Ph.D. in Physics, from the Indian Institute of Science, Bangalore, India. Subsequently, he gained industrial research experience from Western Digital Corporation (SanDisk India Device Design Center) as a Staff Engineer (scientist) in the Device Research group (R & D Engineering) from January 2018 to September 2019). Before joining IIT Bombay he worked as a post-doctoral scholar in materials engineering at Purdue University, USA from September 2019 to January 2021.
Awards and Nomination:
2022 INSA Medal for Young Scientist 2022
18-12-2018 Memory Technology -Recognition for exemplary dedication and effort on BiCS BinZZ Blue release for USB by Anand Venkitachalam, Vice President, R & D Engineering, Western Digital
06-09-2018 Memory Technology - Recognition for exemplary dedication, effort on Brahma-II 1TB drives with BiCS 512 Gb eX3 2P by Anand Venkitachalam
2017 Foreign Travel Grant Award for USA by CSIR, Govt. of India
2016 International Travel Award for USA by ITS, SERB, DST, Govt. of India
2011 – 2016 Rajiv Gandhi National Fellowship by UGC, Govt. of India
2015 International Travel Award for USA by CeNSE, IISc, Bangalore
2012 National Eligibility Test (NET), conducted by HRD-CSIR, Govt. of India
2009 – 2011 Integrated PhD Scholarship (2009 – 11), Dept. of Physics, IISc, India
1999 – 2008 National Scholarship Awards, Government of India
1999 – 2000 Science Talent Research Test by Jatiya Vigyan Parishad, India
2001 Achievement cum Diagnostic test in Mathematics by Centre for Pedagogical Studies in Mathematics, India
Research experience
Purdue University, USA (Sep 2019 - Sep 2021):
My present research is focused on the fabrication and characterization of micro/nano-devices using strongly-correlated oxide semiconductors such as nickel oxide (NiO), neodymium doped nickel oxide (NdNiO3), vanadium dioxide (VO2), yttria-stabilized zirconia (YSZ) and Gadolinium-doped ceria (GDC) to emulate non-associative neuromorphic learning behaviours in living organisms for artificial intelligence. The main goal of this project is to understand the physical phenomenon of materials for neuromorphic computing/machine learning applications, which evokes an extensive interest in the condensed matter physics and engineering disciplines. In this study: (a) multi-component oxide thin films and metal electrodes are grown in non-stoichiometry growth chambers (physical vapour deposition); (b) utilizing them, neuromorphic devices are fabricated in the class 10 cleanroom at the Birck Nanotechnology Center, Purdue University, USA; (c) finally, the devices are characterised in the in-house (controlled environment) high-speed impedance measurement system that is capable of measuring the electrical properties of neuromorphic devices in a time scale of nanoseconds (ns).
Western Digital Corporation (Jan 2018 - Sep 2019):
I was involved in developing 96 layers of three-dimensional (3D) BiCS4-NAND flash memory technology. This opportunity enabled me to gain extensive hands-on experience in multi-generation (two- and three-dimensional) NAND flash memory design specifications and operation modes, device physics and reliability, memory qualification, product engineering test flow and memory system integration. I was greatly involved in path-finding storage system solution projects, ranging from higher-performance NAND to lower-cost memory feasibility studies.
Indian Institute of Science (Aug 2009 - July 2017):
The major focus of my work was developing novel fabrication and measurement techniques, including the growth of different types of materials for nanoelectronic devices such as thin-film transistors (TFTs) and memory devices. In the initial stages of my integrated PhD program (Master of Science (MS) + Doctor of Philosophy (PhD)), I worked on dielectric-made two-terminal memory devices using colloidal nanocrystals. Thereafter, I developed a new electrical measurement technique for two-terminal capacitive flash memory devices. To the best of my knowledge, it is the fastest measurement technique compared to all previously-employed measurement systems for such devices. The above devices were fabricated using a fully solution processing method. This is the first-ever report on fully solution-processed memory devices. In addition, I have fabricated a novel and robust flash memory-TFT using sol-gel dielectrics (ALPO, ZrO2, TiO2 and HfO2) and semiconductors (IGZO, IZO, In2O3 and ZnO2). This type of novel memory technology has not been reported so far due to limitations and optimization of the leakage current and intrinsic trap density simultaneously in the charge storage dielectric layers. Our group was the first to demonstrate a completely solution-processed flash memory device with equivalent performance as that fabricated by sophisticated high vacuum technology.